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| RB085T-60 Diodes Schottky barrier diode RB085T-60 Applications Switching power supply External dimensions (Unit : mm) 9.9 0.8 0.3 2.2 Structure 10.0 1.2 1.3 0.8 (1) (2) (3) 2.540.5 2.540.5 5.0 0.2 Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 10.00.3 0.1 1.8 0.2 4.50.3 0.1 2.80.2 1.1 0.1 7.00.3 0.1 3.10.1 7.2 1.2 17.0 0.4 0.2 8.0 0.2 12.0 0.2 15.0 Construction Silicon epitaxial planar 0.7 0.015 13.5MIN 0.70.015 8.0 2.60.03 7.0 1.9 1.35 0.8 2.6 0.03 7.2 3-1.2 1.6 ROHM : O220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature (*1)Tc=100max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 10 100 150 -40 to +150 Unit V V A A Electrical characteristic (Ta=25C) Parameter Forward voltage Reserve current Thermal impedance Symbol VF IR jc Min. Typ. Max. 0.58 300 2.5 Unit V A /W Conditions IF=5A VR=60V junction to case 12.4 Rev.A 1/3 RB085T-60 Diodes Electrical characteristic curves 10 Ta=150 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125 Ta=150 100000 10000 1000 100 10 Ta=125 1000 f=1MHz Ta=75 Ta=25 Ta=-25 1 Ta=75 Ta=25 Ta=-25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 0.1 1 0.1 0.01 0 10 20 30 40 50 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 60 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 550 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 300 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 800 Ta=25 VR=30V n=30pcs f=1MHz VR=0V n=30pcs Ta=25 540 530 520 510 AVE:532.6mV 500 VF DISPERSION MAP Ta=25 IF=5A n=30pcs 790 780 770 760 750 740 730 720 710 AVE:738.5pF 700 250 200 150 100 50 0 IR DISPERSION MAP Ta=25 f=1MHz VR=0V n=10pcs AVE:36.7uA AVE:8.172uA :1.9469uA Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms 1000 250 200 150 100 50 0 25 20 15 10 5 0 AVE:9.30ns Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 10 AVE:236.0A 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 1000 Ifsm t 100 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Mounted on epoxy board IF=5A IM=100mA time 300us 15 DC PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD POWER DISSIPATION:Pf(W) 10 Rth(j-a) D=1/2 10 Sin(180) 1ms 100 1 Rth(j-c) 5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.1 10 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 10 15 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 5 20 Rev.A 2/3 RB085T-60 Diodes 5 4 REVERSE POWER DISSIPATION:PR (W) 30 0A 0V t Io VR D=t/T VR=30V Tj=150 30 0A 0V t Io VR D=t/T VR=30V T Tj=150 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 20 DC D=1/2 T 20 3 2 1 0 0 10 Sin(180) D=1/2 DC DC D=1/2 10 Sin(180) 10 Sin(180) 0 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 30 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 15 AVE:7.50kV 10 5 0 C=200pF R=0 No break at 30kV C=100pF R=1.5k ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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